Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers

ABSTRACT

A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from the first layer. The subassembly also includes a second patterned polymer layer disposed on a radially outer portion of the first patterned polymer layer. The first and second layers define a cell for accommodating a power semiconductor die. Solder material is disposed on the exposed portion of the heat sink surface and in the cell. A power semiconductor die is located within the cell on a radially inward portion of the first layer and thermally coupled to the heat sink by the solder material.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a divisional of U.S. patent application Ser.No. 11/827,593, filed on Jul. 12, 2007, the contents of which areincorporated herein by reference.

This application is also related to U.S. patent application Ser. No.11/827,592 filed on Jul. 12, 2007 and entitled “Subassembly ThatIncludes A Power Semiconductor Die And A Heat Sink Having An ExposedSurface Portion Thereof,” which is incorporated herein by reference inits entirety.

FIELD OF THE INVENTION

The present invention relates to mounting assemblies and packages forsemiconductor devices used in electronic equipment, and moreparticularly to mounting assemblies and packages power semiconductordevices.

BACKGROUND OF THE INVENTION

The electronics industry has been progressing with the miniaturizationof electronic devices. This trend influences semiconductor packagingtechnology, which enables the connection between bare IC chips and othercomponents, and enables the connection between bare IC chips and othercomponents. Typically, a semiconductor package has a footprint muchlarger than that of the chip. To adapt to the miniaturization trend, thesize difference between the package and the chip has been reduced,producing a new package type called a Chip scale package (CSP). A chipscale package is loosely defined as a package that takes no more thanabout 20% additional area (length and width) than the bare silicon die.The solder balls of chip scale packages are smaller than ball grid array(BGA) that had arranged according to international standard of JointElectron Device Engineering Council (JEDEC). When it comes to personaland portable electronic devices, smaller is better, and various productsneed different chip scale package types, a wide array of which arecurrently available.

Certain semiconductor devices are designed to handle relatively highvoltages in a compact space. For example, semiconductor devices that areexposed to RMS voltages greater than 100 VAC, such as 265 VAC or 415VAC, are often mounted in electronic power supplies and the like. Thesedevices may dissipate relatively large amounts of power, and areaccordingly often mounted to heat sinks or like devices as well as beingelectrically connected to electronic equipment of various types.

Many such semiconductor devices for power applications are commonlyavailable in the JEDEC standard TO-220 and DO-218 packages(www.jedec.org). An illustrative TO-220 package 110 is shown in FIG. 1.The TO-220 package 110 includes a pressure clamp 140, retainer 130, heatsink 120, a spacer 150 interposed between the package 110 and the heatsink 120, and a semiconductor die (not visible in FIG. 1) with leads 114exiting the package 110 on one side. High-voltage semiconductor devicesmay also be available in various other packages similar to the TO-220package.

The continued emphasis on faster, smaller, lighter, and lower costelectronics systems is making component, board and system packaging morecomplex each year. The increase in complexity is due to wider use offiner pitch and thinner array surface mount packages, which are the keyto miniaturization of electronics products. Most of the components on atypical systems motherboard for desk top computer systems remain at 1.27and 1.00 mm pitch surface mount components with increasing use of finerpitch (0.80, 0.65, 0.50 & 0.40 mm) array styled packages. Portablesystems are moving to the finer pitches at a faster rate. The componentpitch and overall profile height plays a critical role in the complexityof manufacturing process. The use of finer pitch, low profile componentsdemands assembly equipment and processes that operate with tighterspecification limits. The assembly processes that demand a higherprecision include: pick-and-place, solder paste-printing applications,reflow, inspection, and rework. The use of finer pitch low profilecomponents increases the complexity, which could negatively effect yieldand rework making assemblies more difficult and costly.

One aspect of the packaging process that can reduce yield is theaccuracy with which the semiconductor die can be mounted to the heatsink or slug. The accuracy of this process relies primarily on the pickand place machine that is employed. In addition, another packagingaspect of the packaging process that can also reduce yield is theaccuracy with which the solder thickness can be controlled.

SUMMARY OF THE INVENTION

In accordance with the present invention, a semiconductor assembly isprovided. The assembly includes a first subassembly comprising a heatsink and a first patterned polymer layer disposed on a surface of theheat sink to define an exposed portion of the first surface. The exposedportion of the first surface extends radially inward along the heat sinksurface from the first layer. The subassembly also includes a secondpatterned polymer layer disposed on a radially outer portion of thefirst patterned polymer layer. The first and second layers define a cellfor accommodating a power semiconductor die. Solder material is disposedon the exposed portion of the heat sink surface and in the cell. A powersemiconductor die is located within the cell on a radially inwardportion of the first layer and thermally coupled to the heat sink by thesolder material.

In accordance with one aspect of the invention, the semiconductorassembly may also include a semiconductor package in which the firstsubassembly, solder and die are located.

In accordance with another aspect of the invention, the semiconductorpackage may be is a chip scale package.

In accordance with another aspect of the invention, at least one of thefirst and second patterned polymer layers may include polyimide.

In accordance with another aspect of the invention, the powersemiconductor die may have a footprint with a given shape and the firstpatterned polymer layer conforms to the given shape.

In accordance with another aspect of the invention, the semiconductorassembly may also include a second subassembly. The second subassemblymay include a second heat sink and a third first patterned polymer layerdisposed on a surface of the heat sink to define an exposed portion ofthe surface. The exposed portion of the surface extends radially inwardalong the second heat sink surface from the third layer. The secondsubassembly also includes a fourth patterned polymer layer disposed on aradially outer portion of the third patterned polymer layer The thirdand fourth layers define a cell for accommodating a power semiconductordie. A second solder material is disposed on the exposed portion of thesecond heat sink surface. The power semiconductor die is further locatedwithin the cell on a radially inward portion of the third layer andthermally coupled to the second heat sink by the second solder material.

In accordance with another aspect of the invention, a semiconductorassembly is provided that includes a heat sink and a first patternedpolymer layer disposed on a surface of the heat sink to define anexposed portion of the first surface. The exposed portion of the firstsurface extends radially inward along the heat sink surface from thefirst layer. Solder material is disposed on the exposed portion of theheat sink surface and a power semiconductor die is located on the firstpatterned layer and thermally coupled to the heat sink by the soldermaterial.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an illustrative package for a power semiconductor die.

FIGS. 2( a) and 2(b) show cross-sectional and top views, respectively,of a first heat sink that is to be mounted to a semiconductor die and afirst patterned polymer layer formed on the heat sink.

FIGS. 3( a) and 3(b) show cross-sectional and top views, respectively,of the patterned polymer layers formed on the first heat sink.

FIGS. 4( a) and 4(b) show cross-sectional and top views, respectively,of a solder material located on the surface of the first heat sink.

FIGS. 5( a) and 5(b) show cross-sectional and top views, respectively,of a power semiconductor die positioned on the first heat sink andcontacting one of the patterned polymer layers.

FIGS. 6( a) and 6(b) show cross-sectional and top views, respectively,of solder material applied to the exposed surface of the semiconductordie.

FIGS. 7( a) and 7(b) show cross-sectional and top views, respectively,of the final semiconductor assembly that includes the semiconductor diemounted to two heat sinks.

FIGS. 8( a) and 8(b) show cross-sectional and top views, respectively,of a first heat sink that is to be mounted to a semiconductor die and afirst patterned polymer layer formed on the heat sink when only the x-yposition of the die is to be constrained by the polymer.

FIGS. 9( a) and 9(b) show cross-sectional and top views, respectively,of a solder material located on the surface of the first heat sinkdepicted in FIGS. 8( a) and 8(b).

FIGS. 10( a) and 10(b) show cross-sectional and top views, respectively,of a power semiconductor die positioned on the first heat sink depictedin FIGS. 9( a) and 9(b)

FIGS. 11( a) and 11(b) show cross-sectional and top views, respectively,of solder material applied to the exposed surface of the semiconductordie depicted in FIGS. 10( a) and 10(b)

FIGS. 12( a) and 12(b) show cross-sectional and top views, respectively,of the final semiconductor assembly that includes the semiconductor diemounted to the two heat sinks referred to in connection with FIGS. 8-11.

FIGS. 13( a) and 13(b) show cross-sectional and top views, respectively,of a first heat sink that is to be mounted to a semiconductor die and afirst patterned polymer layer formed on the heat sink when only thesolder thickness is to be controlled by the polymer.

FIGS. 14( a) and 14(b) show cross-sectional and top views, respectively,of a solder material located on the surface of the first heat sinkdepicted in FIGS. 13( a) and 13(b).

FIGS. 15( a) and 15(b) show cross-sectional and top views, respectively,of a power semiconductor die positioned on the first heat sink depictedin FIGS. 14( a) and 14(b)

FIGS. 16( a) and 16(b) show cross-sectional and top views, respectively,of solder material applied to the exposed surface of the semiconductordie depicted in FIGS. 15( a) and 15(b)

FIGS. 17( a) and 17(b) show cross-sectional and top views, respectively,of the final semiconductor assembly that includes the semiconductor diemounted to the two heat sinks referred to in connection with FIGS.13-16.

DETAILED DESCRIPTION

The present invention provides a mounting system for a semiconductordevice that overcomes the aforementioned limitations of prior-artmounting systems. The mounting system is particularly suitable for usewith discrete power semiconductor devices such as those employed forpower linear and switching applications. Examples of such devicesinclude, without limitation, resistors, rectifiers, transistors and thelike. The mounting system discussed herein may be used in connectionwith surface mount technology packages such as chip scale packages, forexample. Examples of standardized packages that may be suitable include,without limitation, JEDEC TO-220 and DO-218 packages. In the detaileddescription that follows, like element numerals are used to identifylike elements appearing in one or more of the figures.

FIGS. 2( a) and 2(b) show cross-sectional and top views, respectively,of a first heat sink 210 that is to be mounted to a semiconductor die.The heat sink 210 may be formed from any suitable thermally conductivematerial such a, but not limited to, Cu, Al and alloys thereof. Inaccordance with the present invention, a curable polymer is applied toan upper surface of the first heat sink 210 and patterned usingwell-known stenciling and screening techniques to form a first patternedpolymer layer 212. Suitable polymers include, without limitation,polymide, silicon rubber, and fluoroelastomer. The first patternedpolymer layer 212 defines sidewalls of a cell 211 in which the soldercan be placed. Next, in FIGS. 3( a) and 3(b), a second patterned polymerlayer 214 is formed over the first polymer layer 212, again usingwell-known stenciling and screening techniques. The second patternedpolymer layer 214 defines a border within which the die is to besituated. Exposed portions 213 of the first patterned layer 212 (i.e.,those portions not covered by the second patterned layer 214) definesurfaces on which the die ultimately can be mounted. As shown in FIGS.4( a) and 4(b), after formation of the first and second patternedpolymer layers, solder 216 is dispensed in a conventional manner using asyringe, for example, onto the heat sink 210 into the cell 211 that isdefined by the first patterned layer 212. In FIGS. 5( a) and 5(b) a pickand place assembly machine or robot is used to position thesemiconductor die 218 onto the exposed portion 213 of the firstpatterned layer 212. The border of the second patterned layer 214facilitates accurate placement and alignment of the die on the heat sink210.

The process depicted in FIGS. 2-5 may be repeated for a second heat sinkthat is to contact the side of the die 218 opposing the first heat sink210. In this case a second heat sink 220 first undergoes the processsteps depicted in FIGS. 2-4 to form first and second patterned layers212 and 214 on a second heat sink 220. Next, as shown in FIGS. 6( a) and6(b), solder 222 is dispensed onto the exposed surface of the die 218.The second heat sink subassembly (i.e., heat sink 220 with patternedlayers 212 and 214 located thereon) is then positioned over the die 218so that the die 218 contacts the exposed surface portion of the secondpatterned layer 212 of the second heat sink subassembly. FIGS. 7( a) and7(b) show cross-sectional and top views, respectively, of the finalsemiconductor assembly that includes the semiconductor die mounted totwo heat sinks.

A number of advantages arise from the use of the mounting processdepicted in FIGS. 2-7. For example, the use of a second patterned layer(e.g., second patterned layer 214) to constrain the position of the dieon the heat sink limits rotational and out-of plane misalignments of thedie. In this way the second patterned layer actively cooperates with thepick and place assembly machine to assist in the placement process and,as a result, the pick and place assembly machine is not solelyresponsible for placement of the die. In addition, the use of a firstpatterned layer (e.g., first patterned layer 212) that directly contactsthe heat sink allows precise control of the overall solder thickness andthickness uniformity. For instance, in some cases the solder thicknessin the final package can be maintained within a tolerance of about 0.25mil to 3 mil. In addition, because the polymer that forms the first andsecond patterned layers is generally relatively soft and pliable, thelevel of stress exerted upon the die can be reduced.

To illustrate the advantages of the present invention, three sampleswere manufactured in accordance with the technique discussed above. Thesolder thickness of the samples were selected to be 55 microns, 65microns and 75 microns, respectively. The 55 micron sample was found tovary in thickness between about 52.8 microns and 54.6 microns. The 65micron sample was found to vary in thickness between about 64.5 micronsand 69.2 microns. The 75 micron sample was found to vary in thicknessbetween about 74.4 microns and 79.2 microns.

The size and shape of the cells 211 defined by the first and secondpatterned layers is not limited to those depicted in FIGS. 2-7. Rather,the size and shape of the cells can be selected as desired for differentdie geometries or footprints (e.g., square, hexagonal, round). The cellconfiguration may also be selected to comply with other factors such asflux overflow, the prevention of shorts and the like. Moreover, thesidewalls of the patterned layers 212 and 214 are not limited to thefour linear segments of polymer for each of the two patterned layersthat are depicted in FIGS. 2-7. Rather, any suitable configuration andnumber of polymer segments may be employed. For example, a square,rectangular or circular cell can be defined by a single continuoussegment of polymer that has a shape defining a square, rectangle orcircle, respectively. Alternatively, multiple continuous ornon-continuous polymer segments may be employed in any number that isdesired.

In the embodiments of the invention presented above one patternedpolymer layer (e.g., patterned layer 214) is employed to constrain orcontrol the x-y position of the die on the surface of the heat sink 210and a second patterned polymer layer (patterned layer 212) is used tocontrol the thickness of the solder in the z-direction. In otherembodiments of the invention only one polymer layer is employed tocontrol either the x-y position of the die or the thickness of thesolder in the z-direction.

FIGS. 8-10 show an embodiment of the invention in which only a singlepolymer layer is employed to constrain or control the x-y position ofthe die on the surface of the heat sink. As shown in FIGS. 8( a) and8(b), which once again show cross-sectional and top views, respectively,of the heat sink 210, a curable polymer is applied to an upper surfaceof the first heat sink 210 and patterned using well-known stenciling andscreening techniques to form an orienting patterned polymer layer 214that is used to constrain or control the x-y position of the die. Theorienting layer 214 defines sidewalls of a cell 211 in which the soldercan be placed. Next, in FIGS. 9( a) and 9(b), solder 216 is dispensed ina conventional manner using a syringe, for example, onto the heat sink210 into the cell 211 that is defined by the orienting patterned layer214. In FIGS. 10( a) and 10(b), a pick and place assembly machine orrobot is used to position the semiconductor die 218 into the cell 211 sothat it contacts the solder 216. The border of the orienting patternedlayer 214 facilitates accurate placement and alignment of the die 218 onthe heat sink 210.

The process depicted in FIGS. 8-10 may be repeated for a second heatsink that is to contact the side of the die 218 opposing the first heatsink 210. In this case a second heat sink 220 first undergoes theprocess steps depicted in FIGS. 8-9 to form the orienting patternedlayer 214 on a second heat sink 220. Next, as shown in FIGS. 11( a) and11(b), solder 222 is dispensed onto the exposed surface of the die 218.The second heat sink subassembly (i.e., heat sink 220 with orientingpatterned layer 214 located thereon) is then positioned over the die 218so that the die 218 is located within the cell defined by the orientingpatterned layer 214 of the second heat sink subassembly. The die 218contacts the solder 222 of the second heat sink assembly to form thecomplete semiconductor assembly depicted in FIG. 12.

FIGS. 13-15 show an embodiment of the invention in which only a singlepolymer layer is employed to control the overall thickness and thicknessuniformity of the solder in the z-direction. As shown in FIGS. 13( a)and 13(b), which once again show cross-sectional and top views,respectively, of the heat sink 210, a curable polymer is applied to anupper surface of the first heat sink 210 and patterned using well-knownstenciling and screening techniques to form a thickness-controllingpatterned polymer layer 212 that is used to control the thickness of thesolder in the z direction. Next, in FIGS. 14( a) and 14(b), solder 216is dispensed in a conventional manner using a syringe, for example, ontothe heat sink 210 into the cell 211 that is defined by thethickness-controlling patterned layer 212. In FIGS. 15( a) and 15(b) apick and place assembly machine or robot is used to position thesemiconductor die 218 onto the thickness-controlling layer 212.

The process depicted in FIGS. 13-15 may be repeated for a second heatsink that is to contact the side of the die 218 opposing the first heatsink 210. In this case a second heat sink 220 first undergoes theprocess steps depicted in FIGS. 13-14 to form the thickness-controllingpatterned layer 212 on a second heat sink 220. Next, as shown in FIGS.16( a) and 16(b), solder 222 is dispensed onto the exposed surface ofthe die 218. The second heat sink subassembly (i.e., heat sink 220 withthickness-controlling patterned layer 212 located thereon) is thenpositioned over the die 218 so that the die 218 is located on thethickness-controlling patterned layer 212 of the second heat sinksubassembly. The die 218 contacts the solder 222 of the second heat sinkassembly to form the complete assembly depicted in FIGS. 17( a) and17(b).

1-6. (canceled)
 7. A semiconductor assembly, comprising: a heat sink; afirst patterned polymer layer disposed on a surface of the heat sink todefine an exposed portion of the first surface, said exposed portion ofthe first surface extending radially inward along the heat sink surfacefrom the first layer; solder material disposed on the exposed portion ofthe heat sink surface; and a power semiconductor die located on thefirst patterned layer and thermally coupled to the heat sink by thesolder material.
 8. The semiconductor assembly of claim 7 furthercomprising a semiconductor package in which the first subassembly,solder and die are located.
 9. The semiconductor assembly of claim 8wherein the semiconductor package is a chip scale package.
 10. Thesemiconductor assembly of claim 7 wherein at least one of the first andsecond patterned polymer layers comprise polyimide.
 11. Thesemiconductor assembly of claim 7 wherein the power semiconductor diehas a footprint with a given shape and the first patterned polymer layerconforms to the given shape.
 12. The semiconductor assembly of claim 7further comprising a second subassembly comprising; a second heat sink;a third first patterned polymer layer disposed on a surface of the heatsink to define an exposed portion of the surface, said exposed portionof the surface extending radially inward along the second heat sinksurface from the third layer; a fourth patterned polymer layer disposedon a radially outer portion of the third patterned polymer layer, saidthird and fourth layers defining a cell for accommodating a powersemiconductor die; a second solder material disposed on the exposedportion of the second heat sink surface; and wherein the powersemiconductor die is further located within the cell on a radiallyinward portion of the third layer and thermally coupled to the secondheat sink by the second solder material.
 13. The semiconductor assemblyof claim 7 wherein the power semiconductor die is located on a radiallyinward portion of the first patterned layer and further comprising asecond patterned polymer layer disposed on a radially outer portion ofthe first patterned polymer layer, said power semiconductor die beinglocated within a region defined by the second patterned polymer layer.14. A semiconductor assembly, comprising: a heat sink; a first patternedpolymer layer disposed on a surface of the heat sink to define a cellfor accommodating the power semiconductor die; solder material disposedon an exposed portion of the heat sink surface located within the cell;and a power semiconductor die located within the cell and thermallycoupled to the heat sink by the solder material.
 15. The semiconductorassembly of claim 14 further comprising a semiconductor package in whichthe first subassembly, solder and die are located.
 16. The semiconductorassembly of claim 15 wherein the semiconductor package is a chip scalepackage.
 17. The semiconductor assembly of claim 14 wherein at least oneof the first and second patterned polymer layers comprise polyimide. 18.The semiconductor assembly of claim 14 wherein the power semiconductordie has a footprint with a given shape and the first patterned polymerlayer conforms to the given shape.
 19. The semiconductor assembly ofclaim 14 further comprising a second subassembly comprising; a secondheat sink; a third patterned polymer layer disposed on a surface of thesecond heat sink to define an exposed portion of the surface, saidexposed portion of the surface extending radially inward along thesecond heat sink surface from the third layer; a fourth patternedpolymer layer disposed on a radially outer portion of the thirdpatterned polymer layer, said third and fourth layers defining a cellfor accommodating a power semiconductor die; a second solder materialdisposed on the exposed portion of the second heat sink surface; andwherein the power semiconductor die is further located within the cellon a radially inward portion of the third layer and thermally coupled tothe second heat sink by the second solder material.
 20. A method forforming a semiconductor assembly, comprising: forming a first patternedpolymer layer on a surface of a heat sink to define an exposed portionof the first surface, said exposed portion of the first surfaceextending radially inward along the heat sink surface from the firstlayer; forming a second patterned polymer layer on a radially outerportion of the first patterned polymer layer, said first and secondlayers defining a cell for accommodating a power semiconductor die;applying a solder material onto the exposed portion of the heat sinksurface and in the cell; and positioning a power semiconductor diewithin the cell on a radially inward portion of the first layer so thatthe die is thermally coupled to the heat sink by the solder material.21. The method of claim 20 further comprising housing the firstsubassembly, solder and die in a semiconductor package.
 22. The methodof claim 21 wherein the semiconductor package is a chip scale package.23. The method of claim 20 wherein the power semiconductor die has afootprint with a given shape and the first patterned polymer layerconforms to the given shape.
 24. The method of claim 20 furthercomprising a second subassembly comprising: forming a third firstpatterned polymer layer on a surface of a second heat sink to define anexposed portion of the surface, said exposed portion of the second heatsink surface extending radially inward along the second heat sinksurface from the third layer; forming a fourth patterned polymer layeron a radially outer portion of the third patterned polymer layer, saidthird and fourth layers defining a cell for accommodating a powersemiconductor die; applying a second solder material onto the exposedportion of the second heat sink surface; and positioning a powersemiconductor die within the cell on a radially inward portion of thethird layer.